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  Datasheet File OCR Text:
 INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA1012
DESCRIPTION *Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -3A *High Switching Speed *Complement to Type 2SC2562
APPLICATIONS *Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
PC
Total Power Dissipation @ TC=25
25
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= -10mA ; IB= 0 IC= -3A; IB= -0.15A
B
2SA1012
MIN -50
TYP.
MAX
UNIT V
-0.4 -1.2 -1 -1 70 30 60 170 240
V V A A
IC= -3A; IB= -0.15A
B
VCB= -50V ; IE= 0 VEB= -5V; IC= 0 IC= -1A ; VCE= -1V IC= -3A ; VCE= -1V IC= -1A ; VCE= -4V IE= 0; VCB= -10V; ftest= 1MHz
MHz pF
Switching Times ton tstg tf Turn-on Time Storage Time Fall Time IC= -3A ,RL= 10, IB1= -IB2= -0.15A,VCC= -30V 0.1 1.0 0.1 s s s
hFE-1 Classifications O 70-140 Y 120-240
isc Websitewww.iscsemi.cn
2


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